|
Major capability parameter | |||||||
|
single crystal |
Doped |
conduction type |
concentration of flows cm-3 |
Density
cm-2 |
Growth method
Max size |
Substrate | |
|
GaP |
S
Undoped |
N
N |
2~8×1017
2~6×1016 |
<105 |
LEC
Dia50 |
2″×0.5
| |
|
Size（mm） |
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Special size and orientation are available upon request | ||||||
|
Surface rough |
Surface roughness(Ra):<=5A | ||||||
|
Polishing |
Single or double | ||||||
|
Pack |
100 clean bag，1000 exactly clean bag | ||||||