|
Major capability parameter | |||||||
|
single crystal |
Doped |
conduction type |
concentration of flows cm-3 |
Density
cm-2 |
Growth method
Max size |
Substrate | |
|
GaAs |
None |
Si |
/ |
<5×105 |
LEC
HB
Dia3″ |
Dia3″×0.5
Dia2″×0.5 | |
|
Si |
N |
>5×1017 | |||||
|
Cr |
Si |
/ | |||||
|
Fe |
N |
~2×1018 | |||||
|
Zn |
P |
>5×1017 | |||||
|
Size（mm） |
25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Special size and orientation are available upon request | ||||||
|
Surface rough |
Surface roughness(Ra):<=5A | ||||||
|
Polishing |
Single or double | ||||||
|
Pack |
100 clean bag，1000 exactly clean bag | ||||||